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Proceedings Paper

Theoretical Study of drain current of AlInN/GaN HEMTs on SiC Substrate
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Paper Abstract

A new heterostructure based on AlxIn1-xN/GaN high electron mobility transistor (HEMT) on SiC substrate has been proposed for high frequency, where it offers the best performance in comparison to other two heterostructures like on AlxGa1-xN/GaN and InxGa1-xN/GaN. We have investigated the effect of different higher output characteristics in comparison to conventional AlxGa1-xN/GaN and InxGa1-xN/GaN with the AlxIn1-xN/GaN heterostructure, where the drain current is maximum for AlxIn1-xN/GaN and AlxGa1-xN/GaN heterostructure HEMT respectively for the same barrier thickness and for the same gate source voltage.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490S (15 October 2012); doi: 10.1117/12.927259
Show Author Affiliations
Md. Iqbal Hossain, Univ. of Dhaka (Bangladesh)
Khandakar Nusrat Islam, Khulna Univ. of Engineering and Technology (Bangladesh)
Chandan Qumar Howlader, Khulna Univ. of Engineering and Technology (Bangladesh)
Zahid Hasan Mahmood, Univ. of Dhaka (Bangladesh)

Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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