Proceedings Paper
Growth of nanocrystalline silicon films by VHF PECVD| Format | Member Price | Non-Member Price |
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Paper Abstract
Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited using very high frequency (VHF) plasma enhanced
chemical vapor deposition (PECVD) technique at 60 MHz. Films were grown at different power from 5 W to 40 W. The
maximum deposition rate was found to be 6.1 A0/sec at 20 W power. These films were characterized by XRD which revealed that
the size of the Si nanocrystals are in the range of 15.7 to 19.6 A0. The optical band gap was found in the range between 1.64 to
1.74 eV.
Paper Details
Date Published: 15 October 2012
PDF: 7 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85493C (15 October 2012); doi: 10.1117/12.926986
Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)
PDF: 7 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85493C (15 October 2012); doi: 10.1117/12.926986
Show Author Affiliations
Jhuma Gope, CSIR-National Physical Lab. (India)
Banaras Hindu Univ. (India)
Sushil Kumar, CSIR-National Physical Lab. (India)
Sukhbir Singh, CSIR-National Physical Lab. (India)
Banaras Hindu Univ. (India)
Sushil Kumar, CSIR-National Physical Lab. (India)
Sukhbir Singh, CSIR-National Physical Lab. (India)
C. M. S Rauthan, CSIR-National Physical Lab. (India)
P. C. Srivastava, Banaras Hindu Univ. (India)
P. C. Srivastava, Banaras Hindu Univ. (India)
Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)
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