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Proceedings Paper

Complex bandstructure of direct bandgap III-V semiconductors: application to tunneling
Author(s): Arvind Ajoy
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Paper Abstract

Band to band tunneling in semiconductors fundamentally depends of the complex bandstructure of the semiconductor within its bandgap. In this work, the orientation dependent complex bandstructure of InSb, InAs, GaSb, InP and GaAs, and the orientation dependent probability of band to band tunneling in these materials have been computed using an sp3d5s tight binding model. These direct bandgap III-V materials are attractive candidates for Tunnel FETs. Comparison of our results with Kane’s two-band model commonly used in TCAD simulation, demonstrates the inaccuracies of the latter. Our results will be useful in the design of better performing Tunnel FETs in these materials.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 854923 (15 October 2012); doi: 10.1117/12.926964
Show Author Affiliations
Arvind Ajoy, Indian Institute of Technology Madras (India)

Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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