
Proceedings Paper
Controlling of short channel effects in pocket implanted Ge channel pMOSFETs with high-k gate stacksFormat | Member Price | Non-Member Price |
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Paper Abstract
Germanium has emerged as a potential contender to long-standing Si due largely to its augmented bulk carrier
mobility, especially for holes. Nevertheless Ge MOSFETs suffer from poor interface properties and exhibit early
onset of short channel effects (SCEs). Here we investigate how SCEs in Ge devices can be controlled by employing
halo implants in presence of interface and fixed trap charge densities. Also halo implants are optimized to obtain a
constant threshold voltage over a wide variation of channel lengths. In addition we study the effect of substrate bias
in controlling short channel effects. Further the combined effects of halo concentration and substrate bias are
investigated to attain a specified value of threshold voltage over a wide variation of channel lengths down to 50 nm.
Results obtained from our model show excellent agreement with numerical simulation data obtained using ATLAS
and also with reported experimental data.
Paper Details
Date Published: 15 October 2012
PDF: 10 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490A (15 October 2012); doi: 10.1117/12.926880
Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)
PDF: 10 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490A (15 October 2012); doi: 10.1117/12.926880
Show Author Affiliations
Chandrima Mondal
Abhijit Biswas
Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)
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