
Proceedings Paper
Analysis of Angelov Model for 0.25um pHEMTsFormat | Member Price | Non-Member Price |
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Paper Abstract
This paper explains the extraction of parameters of Angelov’s model for 0.25μm GaAs pHEMT (2x100μm) devices
using extensive measurements without using any expensive extraction software. For DC parameters, we analyzed the
equations associated with the parameters and established an effective extraction procedure. The small signal parameter
extraction was also carried out extensively at various bias points and the bias dependency has been added for certain
non-linear elements in the complete model. The model accuracy has been confirmed by I-V matching, S-parameter
matching and single tone harmonic levels matching between the measured data and the modeled characteristics. The
average percentage accuracy between modeled and measured data has been found out to be around 94-95% for Sparameter
matching at different bias points and around 88-89% for I-V matching.
Paper Details
Date Published: 15 October 2012
PDF: 5 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490N (15 October 2012); doi: 10.1117/12.926856
Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)
PDF: 5 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490N (15 October 2012); doi: 10.1117/12.926856
Show Author Affiliations
Deepti Mongia, Solid State Physics Lab. (India)
Meena Mishra, Solid State Physics Lab. (India)
Ashok Kumar, Solid State Physics Lab. (India)
Meena Mishra, Solid State Physics Lab. (India)
Ashok Kumar, Solid State Physics Lab. (India)
V. R. Balakrishnan, Solid State Physics Lab. (India)
Harishankar Sharma, Solid State Physics Lab. (India)
B. K. Sehgal, Solid State Physics Lab. (India)
Harishankar Sharma, Solid State Physics Lab. (India)
B. K. Sehgal, Solid State Physics Lab. (India)
Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)
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