This paper explains the extraction of parameters of Angelov’s model for 0.25μm GaAs pHEMT (2x100μm) devices using extensive measurements without using any expensive extraction software. For DC parameters, we analyzed the equations associated with the parameters and established an effective extraction procedure. The small signal parameter extraction was also carried out extensively at various bias points and the bias dependency has been added for certain non-linear elements in the complete model. The model accuracy has been confirmed by I-V matching, S-parameter matching and single tone harmonic levels matching between the measured data and the modeled characteristics. The average percentage accuracy between modeled and measured data has been found out to be around 94-95% for Sparameter matching at different bias points and around 88-89% for I-V matching.

Date Published: 15 October 2012
PDF: 5 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490N (15 October 2012); doi: 10.1117/12.926856

Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)