60 and 100 MeV Oxygen ion induced forward current gain degradation on 2N 3866 transistor is investigated by making I-V measurements before and after irradiation. It clearly shows that the decrease in gain in 60 MeV O-ion transistor is drastic, hence depicts that the device is vulnerable for low energy irradiation. The observed degradation is mainly due to total ionizing dose. The ionization leading to an increase in the total base current that eventually reduces the current gain. C-V measurements are made to estimate the effect of irradiation on the doping concentration of the devices. A plot of (1/C₂) versus voltage shows that the doping concentration of the basecollector junction of the transistor increases upon oxygen ion irradiation.

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490M (15 October 2012); doi: 10.1117/12.926278

Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)