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Proceedings Paper

Optical and I-V studies on Au-ZnO-ITO based UV-sensing devices
Author(s): Pramod R. Reddy; Sandeep Kashyap; Sunita Mishra; Ashok Paul; Pawan Kapur
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Paper Abstract

Being a II-VI semiconductor material with a wide direct band gap corresponding to the U-V region, ZnO finds important applications in U-V light sensors. In this work, we have developed and characterized Au-ZnO-ITO based UV photosensitive devices whose I-V characteristics show p+-i-n type behaviour and show an increased current under UV illumination. ZnO is employed as the active region. Both ZnO and gold were deposited via rf magnetron sputtering. The I-V characteristics of the fabricated UV sensor indicated a knee voltage of 0.69V. The resistance was observed to decrease by a factor of 3.5 under illumination. Further, we have optically characterized ZnO thin films deposited at different power levels to determine the dependency of various optical constants on deposition process parameters. These thin films were characterized using VASE (Variable Angle Spectroscopic Ellipsometer) and their optical properties including refractive index dispersion, band gap along with film thicknesses were extracted and modeled using WVASE modeling software.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85491E (15 October 2012);
Show Author Affiliations
Pramod R. Reddy, CSIR-Central Scientific Instruments Organization (India)
Sandeep Kashyap, CSIR-Central Scientific Instruments Organization (India)
Sunita Mishra, CSIR-Central Scientific Instruments Organization (India)
Ashok Paul, CSIR-Central Scientific Instruments Organization (India)
Pawan Kapur, CSIR-Central Scientific Instruments Organization (India)


Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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