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Proceedings Paper

Diffusion thermopower in suspended graphene
Author(s): R. G. Vaidya; N. S. Sankeshwar; B. G. Mulimani
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Paper Abstract

Diffusion thermopower, Sd, in suspended graphene is investigated for 100 < T< 350 K. Electrons are assumed to be scattered by in-plane and out-of-plane acoustic phonons. Numerical results show that, temperature dependence of Sd, is almost linear for both out-of-plane phonons and in-plane phonons, dominant contribution being from out-of-plane phonons. Comparison with recent available experimental thermopower data [Xu et al arXiv: 1012. 2937v1, (condmat. mes-hall)] obtains a good fit for T< 170K. Sd calculated using Mott expression is found to overestimate the values. Carrier concentration dependence is also studied. Role and relative importance of the two scattering mechanisms is studied.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85491U (15 October 2012); doi: 10.1117/12.925343
Show Author Affiliations
R. G. Vaidya, Karnatak Univ. (India)
Tumkur Univ. (India)
N. S. Sankeshwar, Karnatak Univ. (India)
B. G. Mulimani, Karnatak Univ. (India)

Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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