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Proceedings Paper

A comprehensive charge control based analysis of the effect of donor-layer doping and donor-layer thickness on the P, R and C noise coefficients of a symmetric tied-gate InAlAs/InGaAs DG-HEMT
Author(s): Monika Bhattacharya; Jyotika Jogi; R. S. Gupta; Mridula Gupta
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Paper Abstract

A comprehensive charge control based analytical noise model for a symmetric tied gate 100nm gate-length In0.52Al0.48As/In0.53Ga0.47As DG-HEMT has been presented in this paper. The model evaluates the mean square drain noise current and gate noise current and the P, R & C noise coefficients for the device. The effect of the doping concentration and thickness of the donor-layer on the noise coefficients and hence on the overall noise performance of the device are also studied.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 854903 (15 October 2012);
Show Author Affiliations
Monika Bhattacharya, Univ. of Delhi (India)
Jyotika Jogi, Univ. of Delhi (India)
R. S. Gupta, Maharaja Agrasen Institute of Technology (India)
Mridula Gupta, Univ. of Delhi (India)

Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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