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Proceedings Paper

A comparison of 100 MeV oxygen ion and Co-60 gamma irradiation effect on 200 GHz SiGe HBTs (HF 12)
Author(s): K. C. Praveen; N. Pushpa; Ambuj Tripathi; D. Revannasiddaiah; P. S. Naik; John D. Cressler; A. P. Gnana Prakash
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Paper Abstract

We have investigated the total dose effects of 100 MeV Oxygen ion irradiation on the dc electrical characteristics of Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs). The results of oxygen ion irradiation were compared with Co-60 gamma irradiation in the same total dose range (1 Mrad to 100 Mrad). The results show that even after 100 Mrad of total dose, the degradation in the electrical characteristics of SiGe HBT is acceptable from the circuit design point of view.

Paper Details

Date Published: 15 October 2012
PDF: 2 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490J (15 October 2012); doi: 10.1117/12.925195
Show Author Affiliations
K. C. Praveen, The Univ. of Mysore (India)
N. Pushpa, The Univ. of Mysore (India)
Ambuj Tripathi, Inter Univ. Accelerator Ctr. (India)
D. Revannasiddaiah, The Univ. of Mysore (India)
P. S. Naik, The Univ. of Mysore (India)
John D. Cressler, Georgia Institute of Technology (United States)
A. P. Gnana Prakash, The Univ. of Mysore (India)

Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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