The electron initiated avalanche gain and bandwidth are calculated for thin submicron GaAs n⁺-i-p⁺ avalanche photodiode. A model is used to estimate the avalanche build-up of carriers in the active multiplication layer considering the dead-space effect. In the model, the carriers are identified both by their energy and position in the multiplication region. The excess energy of the carriers above threshold is assumed to be equally distributed among the carriers generated after impact ionization. The gain versus bias and bandwidth versus gain characteristics of the device are also demonstrated for different active layer thicknesses of the APD.

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 854902 (15 October 2012); doi: 10.1117/12.925141

Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)