
Proceedings Paper
Modeling the gain and bandwidth of submicron active layer n+-i-p+ avalanche photodiodeFormat | Member Price | Non-Member Price |
---|---|---|
$17.00 | $21.00 |
Paper Abstract
The electron initiated avalanche gain and bandwidth are calculated for thin submicron GaAs n+-i-p+ avalanche
photodiode. A model is used to estimate the avalanche build-up of carriers in the active multiplication layer considering
the dead-space effect. In the model, the carriers are identified both by their energy and position in the multiplication
region. The excess energy of the carriers above threshold is assumed to be equally distributed among the carriers
generated after impact ionization. The gain versus bias and bandwidth versus gain characteristics of the device are also
demonstrated for different active layer thicknesses of the APD.
Paper Details
Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 854902 (15 October 2012); doi: 10.1117/12.925141
Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)
PDF: 6 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 854902 (15 October 2012); doi: 10.1117/12.925141
Show Author Affiliations
Kanishka Majumder, Univ. of Calcutta (India)
N. R. Das, Univ. of Calcutta (India)
Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)
© SPIE. Terms of Use
