Proceedings Paper
Characterization of silicide-silicon interface contact resistivity using 1-D dual transmission line model approximation of modified cross bridge kelvin measurements| Format | Member Price | Non-Member Price |
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Paper Abstract
Conventional 1D single level transmission line
model (TLM) to extract silicide-silicon contact resistivity does
not take into account silicide sheet resistance. In this paper, 1D
dual level TLM model approximation is used for extraction of
the silicide sheet resistance and silicide-silicon contact
resistivity. Experiments involving Platinum content increase in
Nickel Silicide and pre-silicide Carbon implant in Silicon
Germanium (SiGe) PMOS is analyzed using our model.
Paper Details
Date Published: 15 October 2012
PDF: 3 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85493J (15 October 2012); doi: 10.1117/12.924514
Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)
PDF: 3 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85493J (15 October 2012); doi: 10.1117/12.924514
Show Author Affiliations
Ankr Arya, IBM Semiconductor Research and Development Ctr. (India)
Balaji Jayaraman, IBM Semiconductor Research and Development Ctr. (India)
Mohit Bajaj, IBM Semiconductor Research and Development Ctr. (India)
Balaji Jayaraman, IBM Semiconductor Research and Development Ctr. (India)
Mohit Bajaj, IBM Semiconductor Research and Development Ctr. (India)
Abhisek Dixit, IBM Semiconductor Research and Development Ctr. (India)
Cung Tran, IBM Semiconductor Research and Development Ctr. (United States)
Cung Tran, IBM Semiconductor Research and Development Ctr. (United States)
Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)
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