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Proceedings Paper

Variable range hopping in hydrogenated amorphous silicon-nickel alloys
Author(s): Abdelfattah Narjis; Abdelhamid El Kaaouachi; Abdelghani Sybous; Lhoussine Limouny; Said Dlimi; Gerard Biskupski
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Paper Abstract

On the insulating side of the metal-insulator transition (MIT), the study of the effect of low Temperatures T on the electrical transport in amorphous silicon-nickel alloys a-Si1-yNiy:H exhibits that the electrical conductivity follows, at the beginning, the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T-1/2. This behaviour showed that long range electron-electron interaction reduces the Density Of State of carriers (DOS) at the Fermi level and creates the Coulomb gap (CG). For T higher than a critical value of temperature TC, we obtained the Mott Variable Range Hopping regime with T-1/4, indicating that the DOS becomes almost constant in the vicinity of the Fermi level. The critical temperature TC decreases with nickel content in the alloys.

Paper Details

Date Published: 27 September 2012
PDF: 6 pages
Proc. SPIE 8459, Physical Chemistry of Interfaces and Nanomaterials XI, 84590V (27 September 2012); doi: 10.1117/12.924337
Show Author Affiliations
Abdelfattah Narjis, Univ. Ibn Zohr (Morocco)
Abdelhamid El Kaaouachi, Univ. Ibn Zohr (Morocco)
Abdelghani Sybous, Univ. Ibn Zohr (Morocco)
Lhoussine Limouny, Univ. Ibn Zohr (Morocco)
Said Dlimi, Univ. Ibn Zohr (Morocco)
Gerard Biskupski, Univ. des Sciences et Technologies de Lille (France)

Published in SPIE Proceedings Vol. 8459:
Physical Chemistry of Interfaces and Nanomaterials XI
Jenny Clark; Carlos Silva, Editor(s)

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