Proceedings Paper
Monothically integrated GaAs and Si based long-wavelength tunable photodetector| Format | Member Price | Non-Member Price |
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Paper Abstract
We demonstrated a tunable long wavelength photodetector by using heteroepitaxy growth of InP-based
In0.53Ga0.47As-InP p-i-n structure on GaAs based GaAs/AlAs Fabry-Perot filter structure. High quality heterepitaxy was
realized by employing a thin low-temperature buffer layer. A wavelength tuning range of 10.0 nm, a quantum efficiency
of 23%, a spectral linewidth of 0.8 nm and a 3-dB bandwidth of 6.2 GHz were simultaneously obtained in the device.
Moreover, a Si based long wavelength photodetector with the same device structure was also fabricated successfully by
using Si/GaAs and GaAs/InP heteroepitaxy. Crack-free GaAs on Si and high-quality epilayer with area of
800μm×700μm was obtained by using mid-patterned growth and thermal-cycle annealing. The Si-based photodetector
with spectral linewidth of 1.1nm (FWHM) and quantum efficiency of 9.0% was demonstrated.
Paper Details
Date Published: 9 May 2012
PDF: 7 pages
Proc. SPIE 8439, Optical Sensing and Detection II, 84392D (9 May 2012);
Published in SPIE Proceedings Vol. 8439:
Optical Sensing and Detection II
Francis Berghmans; Anna Grazia Mignani; Piet De Moor, Editor(s)
PDF: 7 pages
Proc. SPIE 8439, Optical Sensing and Detection II, 84392D (9 May 2012);
Show Author Affiliations
Hailin Cui, Capital Normal Univ. (China)
Jihe Lv, Beijing Univ. of Posts and Telecommunications (China)
Jihe Lv, Beijing Univ. of Posts and Telecommunications (China)
Hui Huang, Beijing Univ. of Posts and Telecommunications (China)
Published in SPIE Proceedings Vol. 8439:
Optical Sensing and Detection II
Francis Berghmans; Anna Grazia Mignani; Piet De Moor, Editor(s)
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