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Proceedings Paper

Electric field tuning of the band gap in four layers of graphene with different stacking order
Author(s): Artak A. Avetisyan; Bart Partoens; Francois M. Peeters
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Paper Abstract

We investigated the effect of different stacking order of the four graphene layer system on the induced band gap when positively charged top and negatively charged back gates are applied to the system. A tight-binding approach within a self-consistent Hartree approximation is used to calculate the induced charges on the different graphene layers. We show that the electric field does not open an energy gap if the multilayer graphene system contains a trilayer part with the ABA Bernal stacking.

Paper Details

Date Published: 25 January 2012
PDF: 8 pages
Proc. SPIE 8414, Photonics and Micro- and Nano-structured Materials 2011, 84140D (25 January 2012); doi: 10.1117/12.923618
Show Author Affiliations
Artak A. Avetisyan, Yerevan State Univ. (Armenia)
Bart Partoens, Antwerp Univ. (Belgium)
Francois M. Peeters, Antwerp Univ. (Belgium)

Published in SPIE Proceedings Vol. 8414:
Photonics and Micro- and Nano-structured Materials 2011
Rafael Kh. Drampyan, Editor(s)

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