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Proceedings Paper

Improving beam quality in broad area semiconductor amplifiers
Author(s): Ramon Herrero; Muriel Botey; Nikhil P. Kumar; Kestutis Staliunas
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Paper Abstract

Broad area semiconductors lasers and amplifiers are of technological relevance because of their high conversion efficiency and high output power, in a wide range of wavelengths. However, due to their specific waveguiding planar geometry, which is unique to this kind of heterostructures, the beam is usually of low spatial and temporal quality. Therefore, the beam quality restricts their potential use. We propose to improve the beam quality of semiconductors lasers and amplifiers using a two-dimensional spatial modulation of both the refractive index and the optical gain/loss, on the scale of the wavelength. The modulation of the refractive index and gain/loss function on a small scale modifies the spatial dispersion and introduces anisotropic gain on a large scale. As a result, the modified dispersion gives rise to interesting and technologically useful effects, such as spatial filtering or focalization behind the amplifier. We show that such effects can be achieved considering a modulated injection current which imposes a periodic spatial modulation of the active layer of the semiconductor.

Paper Details

Date Published: 11 May 2012
PDF: 7 pages
Proc. SPIE 8432, Semiconductor Lasers and Laser Dynamics V, 843222 (11 May 2012); doi: 10.1117/12.922849
Show Author Affiliations
Ramon Herrero, Univ. Politècnica de Catalunya (Spain)
Muriel Botey, Univ. Politècnica de Catalunya (Spain)
Nikhil P. Kumar, Univ. Politècnica de Catalunya (Spain)
Kestutis Staliunas, Univ. Politècnica de Catalunya (Spain)

Published in SPIE Proceedings Vol. 8432:
Semiconductor Lasers and Laser Dynamics V
Krassimir Panajotov; Marc Sciamanna; Angel Valle; Rainer Michalzik, Editor(s)

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