
Proceedings Paper
Design, fabrication, and characterisation of fully etched TM grating coupler for photonic integrated system-in-packageFormat | Member Price | Non-Member Price |
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Paper Abstract
Grating couplers are the best solution for testing nano-photonic circuits. Their main benefit is that they allow access via
an optical fiber from the top and therefore there is no need to dice the chip and prepare the facets crucially. In the
PLATON project grating couplers were designed to couple TM mode into and out of the SOI waveguides.
Simulations came up with a grating coupler layout capable of theoretical coupling losses lower than 3dB for 1550 nm in
TM configuration. A fully etched grating structure was chosen for fabrication simplicity and the optimal filling factor
was found.
The structures were fabricated using proximity error correction (PEC) and show a uniform coupling efficiency for all
couplers. Therefore they are well-suited for all applications which demand for stable fiber-to-chip coupling.
The spectral response of the structures was measured from 1500 to 1580 nm with 2 nm step and measuring the fiber-tofiber
losses of three straight waveguides equipped with three grating couplers with different gap widths. The optimal
grating period exhibits adequate coupling losses of 3.23 dB per coupler at 1557 nm, being therefore the most promising
design.
Paper Details
Date Published: 10 May 2012
PDF: 8 pages
Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 84310G (10 May 2012); doi: 10.1117/12.922846
Published in SPIE Proceedings Vol. 8431:
Silicon Photonics and Photonic Integrated Circuits III
Laurent Vivien; Seppo K. Honkanen; Lorenzo Pavesi; Stefano Pelli, Editor(s)
PDF: 8 pages
Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 84310G (10 May 2012); doi: 10.1117/12.922846
Show Author Affiliations
Oriol Gili-de-Villasante, Technische Univ. Berlin (Germany)
Paul Tcheg, Technische Univ. Berlin (Germany)
Bei Wang, Fraunhofer Institute for Reliability and Microintegration (Germany)
Alpaslan Suna, Fraunhofer Institute for Reliability and Microintegration (Germany)
Giannis Giannoulis, National Technical Univ. of Athens (Greece)
Ioannis Lazarou, National Technical Univ. of Athens (Greece)
Paul Tcheg, Technische Univ. Berlin (Germany)
Bei Wang, Fraunhofer Institute for Reliability and Microintegration (Germany)
Alpaslan Suna, Fraunhofer Institute for Reliability and Microintegration (Germany)
Giannis Giannoulis, National Technical Univ. of Athens (Greece)
Ioannis Lazarou, National Technical Univ. of Athens (Greece)
Dimitrios Apostolopoulos, National Technical Univ. of Athens (Greece)
Hercules Avramopoulos, National Technical Univ. of Athens (Greece)
Nikos Pleros, Aristotle Univ. of Thessaloniki (Greece)
Matthias Baus, AMO GmbH (Germany)
Matthias Karl, AMO GmbH (Germany)
Tolga Tekin, Technische Univ. Berlin (Germany)
Fraunhofer Institute for Reliability and Microintegration (Germany)
Hercules Avramopoulos, National Technical Univ. of Athens (Greece)
Nikos Pleros, Aristotle Univ. of Thessaloniki (Greece)
Matthias Baus, AMO GmbH (Germany)
Matthias Karl, AMO GmbH (Germany)
Tolga Tekin, Technische Univ. Berlin (Germany)
Fraunhofer Institute for Reliability and Microintegration (Germany)
Published in SPIE Proceedings Vol. 8431:
Silicon Photonics and Photonic Integrated Circuits III
Laurent Vivien; Seppo K. Honkanen; Lorenzo Pavesi; Stefano Pelli, Editor(s)
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