Share Email Print

Proceedings Paper

Air-bridge high-speed InGaAs/InP waveguide photodiode
Author(s): H. Yang; C. L. L. M. Daunt; W. Han; K. Thomas; B. Corbett; F. H. Peters
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The photodiode (PD) is a key component in optical transmission and optical measurement systems which receive optical signals and convert them into electric signals. High speed, high responsivity, high power and low dark current are desirable attributes of the PD in these applications, but also a simple fabrication process for high yield and low cost is essential for industry production. In this paper, an undercut-air-bridge high speed InGaAs/InP PIN structural photodiode is presented. By utilizing the crystal orientation dependent wet etching of InP material and designing the arms of the bridge with proper angle, the air bridge was easily obtained, which greatly eased the fabrication. The fabricated devices with 120μm×3μm ridge waveguides work robustly up to 30GHz in the measurements and potentially faster with optimized material.

Paper Details

Date Published: 9 May 2012
PDF: 7 pages
Proc. SPIE 8439, Optical Sensing and Detection II, 843925 (9 May 2012); doi: 10.1117/12.922363
Show Author Affiliations
H. Yang, Tyndall National Institute (Ireland)
C. L. L. M. Daunt, Tyndall National Institute (Ireland)
Univ. College Cork (Ireland)
W. Han, Tyndall National Institute (Ireland)
K. Thomas, Tyndall National Institute (Ireland)
B. Corbett, Tyndall National Institute (Ireland)
F. H. Peters, Tyndall National Institute (Ireland)
Univ. College Cork (Ireland)

Published in SPIE Proceedings Vol. 8439:
Optical Sensing and Detection II
Francis Berghmans; Anna Grazia Mignani; Piet De Moor, Editor(s)

© SPIE. Terms of Use
Back to Top