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Proceedings Paper

Second-harmonic generation from silicon nitride films
Author(s): Tingyin Ning; Henna Pietarinen; Outi Hyvärinen; Janne Simonen; Goëry Genty; Martti Kauranen
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Paper Abstract

Silicon nitride (SiNx) is an important material for on-chip waveguides and resonators due to its tunable refractive index and low optical loss at the visible and near-infrared wavelengths. In this work, we report our results on second-harmonic generation from SiNx thin films at the fundamental wavelength of 1064 nm. The SiNx thin films with the thicknesses between 100 nm and 1500 nm were prepared on fused silica substrates by plasma enhanced chemical vapor deposition. Strong SHG signal was observed from SiNx films, with the absolute levels significantly higher than those from typical dielectric surfaces. The second-order properties of the samples were fully characterized by second-harmonic generation as a function of the state of polarization of the fundamental field. The polarization dependent SHG indicates that the SiNx films possess in-plane isotropy and polar order along the surface normal. The strong second-order nonlinear response from the SiNx films has great potential applications in the on-chip nanophotonic devices.

Paper Details

Date Published: 30 April 2012
PDF: 7 pages
Proc. SPIE 8424, Nanophotonics IV, 84240G (30 April 2012); doi: 10.1117/12.922355
Show Author Affiliations
Tingyin Ning, Tampere Univ. of Technology (Finland)
Henna Pietarinen, Tampere Univ. of Technology (Finland)
Outi Hyvärinen, Tampere Univ. of Technology (Finland)
Janne Simonen, Tampere Univ. of Technology (Finland)
Goëry Genty, Tampere Univ. of Technology (Finland)
Martti Kauranen, Tampere Univ. of Technology (Finland)

Published in SPIE Proceedings Vol. 8424:
Nanophotonics IV
David L. Andrews; Jean-Michel Nunzi; Andreas Ostendorf, Editor(s)

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