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Proceedings Paper

A silicon photonic quasi-crystal structure obtained by interference lithography
Author(s): S. Lis; A. Zakrzewski; J. Gryglewicz; W. Oleszkiewicz; S. Patela
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Paper Abstract

Photonic quasi-crystal structures have been prepared and investigated. Symmetrical patterns were fabricated by interference lithography in negative tone photoresist and transferred to silicon by reactive ion etching. Theoretical influences of pattern detail (radius of hole) on the photonic band gap have been studied. Three types of 2D photonic quasi-crystals have been prepared: 8-fold, 10-fold and 12-fold pattern. Finally, finite-difference time-domain method was used for theoretically prediction of transmission spectrum for fabricated 12-fold quasi-crystal.

Paper Details

Date Published: 25 April 2012
PDF: 7 pages
Proc. SPIE 8425, Photonic Crystal Materials and Devices X, 84251T (25 April 2012); doi: 10.1117/12.922314
Show Author Affiliations
S. Lis, Wroclaw Univ. of Technology (Poland)
A. Zakrzewski, Wroclaw Univ. of Technology (Poland)
J. Gryglewicz, Wroclaw Univ. of Technology (Poland)
W. Oleszkiewicz, Wroclaw Univ. of Technology (Poland)
S. Patela, Wroclaw Univ. of Technology (Poland)

Published in SPIE Proceedings Vol. 8425:
Photonic Crystal Materials and Devices X
Hernán Ruy Míguez; Sergei G. Romanov; Lucio Claudio Andreani; Christian Seassal, Editor(s)

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