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Proceedings Paper

Room temperature direct-gap electroluminescence in Ge/SiGe quantum well waveguides
Author(s): Papichaya Chaisakul; Delphine Marris-Morini; Giovanni Isella; Daniel Chrastina; Jacopo Frigerio; Mohamed-Saïd Rouifed; Nicolas Izard; Xavier Le Roux; Samson Edmond; Jean-René Coudevylle; Laurent Vivien
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Paper Abstract

Room temperature direct gap electroluminescence (EL) from a Ge/Si0.15Ge0.85 MQW waveguide was experimentally studied. The dependence of the EL intensity on the injection current and temperature was measured. The direct gap EL from Ge/SiGe MQWs was shown to be transverse-electric (TE) polarized, confirming that the EL originates from recombination with a HH state.

Paper Details

Date Published: 11 May 2012
PDF: 8 pages
Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 843119 (11 May 2012); doi: 10.1117/12.922008
Show Author Affiliations
Papichaya Chaisakul, Institut d'Électronique Fondamentale, CNRS, Univ. Paris-Sud (France)
Delphine Marris-Morini, Institut d'Électronique Fondamentale, CNRS, Univ. Paris-Sud (France)
Giovanni Isella, Lab. for Epitaxial Nanostructures on Silicon and Spintronics (Italy)
Daniel Chrastina, Lab. for Epitaxial Nanostructures on Silicon and Spintronics (Italy)
Jacopo Frigerio, Lab. for Epitaxial Nanostructures on Silicon and Spintronics (Italy)
Mohamed-Saïd Rouifed, Institut d'Électronique Fondamentale, CNRS, Univ. Paris-Sud (France)
Nicolas Izard, Institut d'Électronique Fondamentale, CNRS, Univ. Paris-Sud (France)
Xavier Le Roux, Institut d'Électronique Fondamentale, CNRS, Univ. Paris-Sud (France)
Samson Edmond, Institut d'Électronique Fondamentale, CNRS, Univ. Paris-Sud (France)
Jean-René Coudevylle, Institut d'Électronique Fondamentale, CNRS, Univ. Paris-Sud (France)
Laurent Vivien, Institut d'Électronique Fondamentale, CNRS, Univ. Paris-Sud (France)


Published in SPIE Proceedings Vol. 8431:
Silicon Photonics and Photonic Integrated Circuits III
Laurent Vivien; Seppo K. Honkanen; Lorenzo Pavesi; Stefano Pelli, Editor(s)

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