Proceedings Paper
A comparison between Si and GaAs nanowire-based photovoltaic devices| Format | Member Price | Non-Member Price |
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Paper Abstract
A comparison between Silicon (Si) which is an indirect band-gap semiconductor and Gallium Arsenide (GaAs) as a
direct band-gap semiconductor for vertical-aligned nanowire radial pn junction-based photovoltaic (PV) devices is
presented. The study takes place through determining the fill factor, the power conversion efficiency, the optimum
device length and the spectrum of the quantum efficiency. The sensitivity of both Si and GaAs nanowire to temperature
variations is also investigated. Finally, the array effect for nanowires of each material alone then of arrays of mixed
elements' types is simulated. The results are found to be in accordance with the available experimental measurements.
Paper Details
Date Published: 23 December 2011
PDF: 11 pages
Proc. SPIE 8204, Smart Nano-Micro Materials and Devices, 820412 (23 December 2011); doi: 10.1117/12.921047
Published in SPIE Proceedings Vol. 8204:
Smart Nano-Micro Materials and Devices
Saulius Juodkazis; Min Gu, Editor(s)
PDF: 11 pages
Proc. SPIE 8204, Smart Nano-Micro Materials and Devices, 820412 (23 December 2011); doi: 10.1117/12.921047
Show Author Affiliations
H. Ghali, The British Univ. in Egypt (Egypt)
W. Anis, Ain Shams Univ. (Egypt)
W. Anis, Ain Shams Univ. (Egypt)
Published in SPIE Proceedings Vol. 8204:
Smart Nano-Micro Materials and Devices
Saulius Juodkazis; Min Gu, Editor(s)
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