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Proceedings Paper

Novel uncooled detector based on gallium nitride micromechanical resonators
Author(s): Vikrant J. Gokhale; Yu Sui; Mina Rais-Zadeh
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Paper Abstract

This work presents measured results demonstrating an uncooled infrared (IR) detector based on gallium nitride (GaN) micromechanical resonators. GaN-based photonic detectors are typically designed to operate in the ultraviolet (UV) regime as the absorption spectrum of wide-band gap GaN peaks at a wavelength of ~360 nm. In contrast, the transduction mechanism of the device presented in this work is the pyroelectric perturbation of a GaN micromechanical resonator, allowing the detection of radiation in the IR regime. IR radiation within the absorption spectrum of the resonating stack material (mainly the IR absorber) is converted into heat causing pyroelectric charge release, which in turn shifts the resonant frequency via changes in the acoustic velocity of GaN. A thin-film IR absorber based on carbon-nanotube nanocomposite is proposed, which offers IR absorptivity of more than 95%. As a proof of concept, we demonstrate a GaN resonant detector operated at 119 MHz, which exhibits an IR sensitivity of ~4 Hz/10nW.

Paper Details

Date Published: 31 May 2012
PDF: 6 pages
Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 835319 (31 May 2012); doi: 10.1117/12.920450
Show Author Affiliations
Vikrant J. Gokhale, Univ. of Michigan (United States)
Yu Sui, Univ. of Michigan (United States)
Mina Rais-Zadeh, Univ. of Michigan (United States)

Published in SPIE Proceedings Vol. 8353:
Infrared Technology and Applications XXXVIII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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