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Proceedings Paper

Passivation of type II InAs/GaSb superlattice photodetectors with atomic layer deposited Al2O3
Author(s): Omer Salihoglu; Abdullah Muti; Kutlu Kutluer; Tunay Tansel; Rasit Turan; Coskun Kocabas; Atilla Aydinli
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Paper Abstract

We have achieved significant improvement in the electrical performance of the InAs/GaSb midwave infrared photodetector (MWIR) by using atomic layer deposited (ALD) aluminium oxide (Al2O3) as a passivation layer. Plasma free and low operation temperature with uniform coating of ALD technique leads to a conformal and defect free coverage on the side walls. This conformal coverage of rough surfaces also satisfies dangling bonds more efficiently while eliminating metal oxides in a self cleaning process of the Al2O3 layer. Al2O3 passivated and unpassivated diodes were compared for their electrical and optical performances. For passivated diodes the dark current density was improved by an order of magnitude at 77 K. The zero bias responsivity and detectivity was 1.33 A/W and 1.9 x 1013 Jones, respectively at 4 μm and 77 K. Quantum efficiency (QE) was determined as %41 for these detectors.

Paper Details

Date Published: 31 May 2012
PDF: 7 pages
Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 83530Z (31 May 2012); doi: 10.1117/12.920406
Show Author Affiliations
Omer Salihoglu, Bilkent Univ. (Turkey)
Abdullah Muti, Bilkent Univ. (Turkey)
Kutlu Kutluer, Middle East Technical Univ. (Turkey)
Tunay Tansel, Middle East Technical Univ. (Turkey)
Rasit Turan, Middle East Technical Univ. (Turkey)
Coskun Kocabas, Bilkent Univ. (Turkey)
Atilla Aydinli, Bilkent Univ. (Turkey)

Published in SPIE Proceedings Vol. 8353:
Infrared Technology and Applications XXXVIII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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