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Proceedings Paper

25Gbit/s fully CMOS-compatible silicon modulator based on interleaved PN junctions
Author(s): Xi Xiao; Yingtao Hu; Hao Xu; Xianyao Li; Kang Xiong; Zhiyong Li; Tao Chu; Yude Yu; Jinzhong Yu
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Paper Abstract

We present a kind of depletion-mode silicon modulators based on cascade interleaved PN junctions, which simultaneously provide high modulation efficiency and large modulation bandwidth. The interfaces of the PN junctions are vertical to the waveguide's propagation direction and tolerant with ± 150nm junction misalignment on the cost of little degradation on the modulation efficiency. The device was fabricated with standard 0.18μm CMOS process, and provides a VπLπ < 1V • cm and an intrinsic bandwidth 39GHz. Over 10GHz electro-optical modulation bandwidth of the device was experimentally obtained. High speed non-return-zero modulation with a bit rate up to 25Gbit/s was finally demonstrated.

Paper Details

Date Published: 22 February 2012
PDF: 6 pages
Proc. SPIE 8333, Photonics and Optoelectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration, 83330I (22 February 2012); doi: 10.1117/12.920386
Show Author Affiliations
Xi Xiao, Institute of Semiconductors (China)
Yingtao Hu, Institute of Semiconductors (China)
Hao Xu, Institute of Semiconductors (China)
Xianyao Li, Institute of Semiconductors (China)
Kang Xiong, Institute of Semiconductors (China)
Zhiyong Li, Institute of Semiconductors (China)
Tao Chu, Institute of Semiconductors (China)
Yude Yu, Institute of Semiconductors (China)
Jinzhong Yu, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 8333:
Photonics and Optoelectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration
Erich Kasper; Jinzhong Yu; Xun Li; Xinliang Zhang; Jinsong Xia; Junhao Chu; Zhijiang Dong; Bin Hu; Yan Shen, Editor(s)

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