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Proceedings Paper

Nanomedicine crystals-inspired optoelectronic device materials and processing
Author(s): Yan Fang; Fangzhang Wang; Rong Wu
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Paper Abstract

Aim: Organic, biological materials and soft matters with optoelectronic donors and acceptors are postulated to be novel optoelectronic device materials. Methods: Molecular self-assemblies of nanomedicine crystals are employed by inelastic electron tunneling interaction force, which is a quantum force to make basic units of organic, biological and soft matter with optoelectronic donors and acceptors to be enlarged from nanometers to micrometers on silicon chips. Results: Self-assembled topographic structures and corresponding conducting with kondo effects and photoluminescence properties of self-assembled nanomedicine crystal building blocks are demonstrated by conducting atomic force microscopy (C-AFM) images and current-voltage curves, and laser micro- photoluminescence (PL) spectra. By contrast to top-down processing, the bottom-up processing of molecular self-assembly is low cost on large scale industrial manufacturing. Conclusion: The self-assembled nanomedicine crystal building blocks with optoelectronic donors and acceptors are candidates of novel optoelectronic device materials to be in the emerging discipline of information technology (IT) in its broadest sense, i.e. bioelectronics & biosensors, optoelectronic devices, data storage devices; simple to complex quantum entanglements and superposition for quantum bits computing, a novel strategy for 2020 IT and beyond.

Paper Details

Date Published: 22 February 2012
PDF: 8 pages
Proc. SPIE 8333, Photonics and Optoelectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration, 83330H (22 February 2012); doi: 10.1117/12.920375
Show Author Affiliations
Yan Fang, Fudan Univ. (China)
Fangzhang Wang, Fudan Univ. (China)
Rong Wu, Fudan Univ. (China)


Published in SPIE Proceedings Vol. 8333:
Photonics and Optoelectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration
Erich Kasper; Jinzhong Yu; Xun Li; Xinliang Zhang; Jinsong Xia; Junhao Chu; Zhijiang Dong; Bin Hu; Yan Shen, Editor(s)

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