GaN epilayers were grown on the AlN buffer layer obtained by pulsed atomic-layer epitaxy (PALE). The influence of PALE-AlN buffer thickness on the quality of GaN epilayers were investigated by atomic force microscopy, high resolution X-Ray diffraction, and photoluminescence (PL) spectrum. The strain states of the GaN epilayers were studied by Raman spectrum. It was found that the thickness of PALE-AlN buffer layer is a key parameter that affects the quality of GaN epilayer, and a proper growth period of PALE-AlN buffer layer leads to excellent surface morphology, crystal quality and optical properties of the GaN epilayer.

Date Published: 22 February 2012
PDF: 7 pages
Proc. SPIE 8333, Photonics and Optoelectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration, 83331I (22 February 2012); doi: 10.1117/12.920296

Published in SPIE Proceedings Vol. 8333:
Photonics and Optoelectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration
Erich Kasper; Jinzhong Yu; Xun Li; Xinliang Zhang; Jinsong Xia; Junhao Chu; Zhijiang Dong; Bin Hu; Yan Shen, Editor(s)