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Proceedings Paper

Spectroscopy of a deterministic single-donor device in silicon
Author(s): M. Fuechsle; J. A. Miwa; S. Mahapatra; H. Ryu; S. Lee; O. Warschkow; L. C. L. Hollenberg; G. Klimeck; M. Y. Simmons
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Paper Abstract

We present a single electron transistor (SET) based on an individual phosphorus dopant atom in an epitaxial silicon environment. Using scanning tunneling microscope (STM) hydrogen lithography, the single impurity is deterministically placed with a spatial accuracy of ± 1 lattice site within a donor-based transport device. Low temperature transport measurements confirm the presence of the single donor and show that the donor charge state can be precisely controlled via gate voltages. We observe a charging energy that is remarkably similar to the value expected for isolated P donors in bulk silicon, which is in sharp contrast to previous experiments on single-dopant transport devices. We show that atomistic modeling can fully capture the effects of the highly-doped transport electrodes on the electronic states of the donor, thus highlighting the high level of control over the electrostatic device properties afforded by a deterministic single donor architecture. Our fabrication method therefore opens the door for the realization of a scalable donor-based qubit architecture in silicon.

Paper Details

Date Published: 4 May 2012
PDF: 7 pages
Proc. SPIE 8400, Quantum Information and Computation X, 840006 (4 May 2012); doi: 10.1117/12.919763
Show Author Affiliations
M. Fuechsle, The Univ. of New South Wales (Australia)
J. A. Miwa, The Univ. of New South Wales (Australia)
S. Mahapatra, The Univ. of New South Wales (Australia)
H. Ryu, Purdue Univ. (United States)
S. Lee, Purdue Univ. (United States)
O. Warschkow, The Univ. of Sydney (Australia)
L. C. L. Hollenberg, The Univ. of Melbourne (Australia)
G. Klimeck, Purdue Univ. (United States)
M. Y. Simmons, The Univ. of New South Wales (Australia)

Published in SPIE Proceedings Vol. 8400:
Quantum Information and Computation X
Eric Donkor; Andrew R. Pirich; Howard E. Brandt, Editor(s)

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