
Proceedings Paper
Temperature-dependent absorption derivative on InAs/GaSb Type II superlatticesFormat | Member Price | Non-Member Price |
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Paper Abstract
We present an investigation of the quantum confined energy levels in a mid-wave infrared and long-wave infrared
InAs/GaSb type II strained-layer superlattice (SLS) photodetector by computing the first derivative of the absorption
spectra from 80K to 250K , with respect to the wavelength. Energy levels of both the fundamental transition and two
other higher orders are identified for the SLS. The temperature evolution of each of these bands was also characterized
by fitting the energy transitions to the Varshni equation, which showed that in general, the higher-energy transitions have
a greater change in bandgap with temperature than the lower-energy ones. The transition energies appeared linearly
dependent on the InAs layer thickness, and had a weaker dependence on the GaSb layer thickness. A feature that
vanished at higher temperatures was also observed, which is due to a GaSb characteristic, rather than the superlattice.
Paper Details
Date Published: 31 May 2012
PDF: 6 pages
Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 83530X (31 May 2012); doi: 10.1117/12.919616
Published in SPIE Proceedings Vol. 8353:
Infrared Technology and Applications XXXVIII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)
PDF: 6 pages
Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 83530X (31 May 2012); doi: 10.1117/12.919616
Show Author Affiliations
Stephen Myers, Univ. of New Mexico (United States)
Sanjay Krishna, Univ. of New Mexico (United States)
Sanjay Krishna, Univ. of New Mexico (United States)
Published in SPIE Proceedings Vol. 8353:
Infrared Technology and Applications XXXVIII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)
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