Proceedings Paper
Advanced µ-bolometer detectors for high-end applications| Format | Member Price | Non-Member Price |
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Paper Abstract
A new generation of high-performance uncooled detector arrays, with 17 and 25 μm pitch, improved sensitivity, and
extended spectral response were developed recently by SCD. This development brings the uncooled infrared technology
very close to the performance of traditional second generation cooled LWIR detectors, and enables a new range of
applications. We demonstrate the use of our Very High Sensitivity (VHS) 25 μm pitch detector with F/2.4, for long
range observation systems. We also present the new Wide-Band (WB) detector, where the detector absorption is tuned to
both the MWIR and LWIR bands, which is optimal for use in some applications such as situation awareness.
Furthermore, in this work we present our 17 μm pitch new family of detectors with different array formats (QVGA,
VGA and XGA). These detectors are targeting a wide range of applications, from medium-performance with low Size,
Weight and Power (SWaP) applications, up to high-performance imaging applications.
Paper Details
Date Published: 31 May 2012
PDF: 10 pages
Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 83531H (31 May 2012); doi: 10.1117/12.918095
Published in SPIE Proceedings Vol. 8353:
Infrared Technology and Applications XXXVIII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)
PDF: 10 pages
Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 83531H (31 May 2012); doi: 10.1117/12.918095
Show Author Affiliations
U. Mizrahi, Semiconductor Devices (SCD) (Israel)
F. Schapiro, Semiconductor Devices (SCD) (Israel)
L. Bykov, Semiconductor Devices (SCD) (Israel)
A. Giladi, Semiconductor Devices (SCD) (Israel)
N. Shiloah, Semiconductor Devices (SCD) (Israel)
I. Pivnik, Semiconductor Devices (SCD) (Israel)
S. Elkind, Semiconductor Devices (SCD) (Israel)
F. Schapiro, Semiconductor Devices (SCD) (Israel)
L. Bykov, Semiconductor Devices (SCD) (Israel)
A. Giladi, Semiconductor Devices (SCD) (Israel)
N. Shiloah, Semiconductor Devices (SCD) (Israel)
I. Pivnik, Semiconductor Devices (SCD) (Israel)
S. Elkind, Semiconductor Devices (SCD) (Israel)
S. Maayani, Semiconductor Devices (SCD) (Israel)
E. Mordechai, Semiconductor Devices (SCD) (Israel)
O. Farbman, Semiconductor Devices (SCD) (Israel)
Y. Hirsh, Semiconductor Devices (SCD) (Israel)
A. Twitto, Israeli MOD (Israel)
M. Ben-Ezra, Israeli MOD (Israel)
A. Fraenkel, Semiconductor Devices (SCD) (Israel)
E. Mordechai, Semiconductor Devices (SCD) (Israel)
O. Farbman, Semiconductor Devices (SCD) (Israel)
Y. Hirsh, Semiconductor Devices (SCD) (Israel)
A. Twitto, Israeli MOD (Israel)
M. Ben-Ezra, Israeli MOD (Israel)
A. Fraenkel, Semiconductor Devices (SCD) (Israel)
Published in SPIE Proceedings Vol. 8353:
Infrared Technology and Applications XXXVIII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)
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