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Proceedings Paper

Photoresist strip challenges for advanced lithography at 20nm technology node and beyond
Author(s): Ivan L. Berry III; Carlo Waldfried; Dwight Roh; Shijian Luo; David Mattson; James DeLuca; Orlando Escorcia
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Paper Abstract

Photoresist strip has traditionally been a low technology process step, but is becoming increasingly more complex with the migration to ultra-shallow junctions, 3D structures, double patterning, and high-mobility channels. At junction depths of a few tens of nanometers, surface effects become increasingly important. Small changes to surface conditions can affect junction resistivity, junction depth, and dopant activation. Advanced high-resolution chemically amplified resist can be problematic when used as an implant mask. Ion beam induced chain scission and photoacid generation can lead to thermal instabilities during the resist strip process. Multilevel resist structures can be difficult to remove and rework and high aspect ratio 3D structures can require near infinite selectivity during the strip processes. This paper will summarize the issues and offer options for solutions.

Paper Details

Date Published: 16 March 2012
PDF: 11 pages
Proc. SPIE 8328, Advanced Etch Technology for Nanopatterning, 83280J (16 March 2012); doi: 10.1117/12.918054
Show Author Affiliations
Ivan L. Berry III, Axcelis Technologies, Inc. (United States)
Carlo Waldfried, Axcelis Technologies, Inc. (United States)
Dwight Roh, Axcelis Technologies, Inc. (United States)
Shijian Luo, Axcelis Technologies, Inc. (United States)
David Mattson, Axcelis Technologies, Inc. (United States)
James DeLuca, Axcelis Technologies, Inc. (United States)
Orlando Escorcia, Axcelis Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 8328:
Advanced Etch Technology for Nanopatterning
Ying Zhang, Editor(s)

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