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Proceedings Paper

The effects of plasma exposure on low-k dielectric materials
Author(s): J. L. Shohet; H. Ren; M. T. Nichols; H. Sinha; W. Lu; K. Mavrakakis; Q. Lin; N. M. Russell; M. Tomoyasu; G. A. Antonelli; S. U. Engelmann; N. C. Fuller; V. Ryan; Y. Nishi
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Paper Abstract

Plasma-induced damage to low-k dielectric materials can be quantified by separation of the effects of charged-particle bombardment, photon bombardment, and gas-radical flux. For ion and photon bombardment, the spatial location and extent of the damage can be determined. Damage effects from radical flux will be shown to be small. Both SiCOH and photo-programmable low-k (PPLK) dielectrics will be discussed.

Paper Details

Date Published: 16 March 2012
PDF: 16 pages
Proc. SPIE 8328, Advanced Etch Technology for Nanopatterning, 83280I (16 March 2012); doi: 10.1117/12.917967
Show Author Affiliations
J. L. Shohet, Univ. of Wisconsin-Madison (United States)
H. Ren, Univ. of Wisconsin-Madison (United States)
M. T. Nichols, Univ. of Wisconsin-Madison (United States)
H. Sinha, Univ. of Wisconsin-Madison (United States)
W. Lu, Univ. of Wisconsin-Madison (United States)
K. Mavrakakis, Univ. of Wisconsin-Madison (United States)
Q. Lin, IBM Watson Research Ctr. (United States)
N. M. Russell, Tokyo Electron Ltd. (United States)
M. Tomoyasu, Tokyo Electron Ltd. (United States)
G. A. Antonelli, Novellus Systems, Inc. (United States)
S. U. Engelmann, IBM Watson Research Ctr. (United States)
N. C. Fuller, IBM Watson Research Ctr. (United States)
V. Ryan, GLOBALFOUNDRIES Inc. (United States)
Y. Nishi, Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 8328:
Advanced Etch Technology for Nanopatterning
Ying Zhang, Editor(s)

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