Proceedings Paper
The effects of plasma exposure on low-k dielectric materials| Format | Member Price | Non-Member Price |
|---|---|---|
| $17.00 | $21.00 |
Paper Abstract
Plasma-induced damage to low-k dielectric materials can be quantified by separation of the effects of charged-particle
bombardment, photon bombardment, and gas-radical flux. For ion and photon bombardment, the spatial location and
extent of the damage can be determined. Damage effects from radical flux will be shown to be small. Both SiCOH and
photo-programmable low-k (PPLK) dielectrics will be discussed.
Paper Details
Date Published: 16 March 2012
PDF: 16 pages
Proc. SPIE 8328, Advanced Etch Technology for Nanopatterning, 83280I (16 March 2012); doi: 10.1117/12.917967
Published in SPIE Proceedings Vol. 8328:
Advanced Etch Technology for Nanopatterning
Ying Zhang, Editor(s)
PDF: 16 pages
Proc. SPIE 8328, Advanced Etch Technology for Nanopatterning, 83280I (16 March 2012); doi: 10.1117/12.917967
Show Author Affiliations
J. L. Shohet, Univ. of Wisconsin-Madison (United States)
H. Ren, Univ. of Wisconsin-Madison (United States)
M. T. Nichols, Univ. of Wisconsin-Madison (United States)
H. Sinha, Univ. of Wisconsin-Madison (United States)
W. Lu, Univ. of Wisconsin-Madison (United States)
K. Mavrakakis, Univ. of Wisconsin-Madison (United States)
Q. Lin, IBM Watson Research Ctr. (United States)
H. Ren, Univ. of Wisconsin-Madison (United States)
M. T. Nichols, Univ. of Wisconsin-Madison (United States)
H. Sinha, Univ. of Wisconsin-Madison (United States)
W. Lu, Univ. of Wisconsin-Madison (United States)
K. Mavrakakis, Univ. of Wisconsin-Madison (United States)
Q. Lin, IBM Watson Research Ctr. (United States)
N. M. Russell, Tokyo Electron Ltd. (United States)
M. Tomoyasu, Tokyo Electron Ltd. (United States)
G. A. Antonelli, Novellus Systems, Inc. (United States)
S. U. Engelmann, IBM Watson Research Ctr. (United States)
N. C. Fuller, IBM Watson Research Ctr. (United States)
V. Ryan, GLOBALFOUNDRIES Inc. (United States)
Y. Nishi, Stanford Univ. (United States)
M. Tomoyasu, Tokyo Electron Ltd. (United States)
G. A. Antonelli, Novellus Systems, Inc. (United States)
S. U. Engelmann, IBM Watson Research Ctr. (United States)
N. C. Fuller, IBM Watson Research Ctr. (United States)
V. Ryan, GLOBALFOUNDRIES Inc. (United States)
Y. Nishi, Stanford Univ. (United States)
Published in SPIE Proceedings Vol. 8328:
Advanced Etch Technology for Nanopatterning
Ying Zhang, Editor(s)
© SPIE. Terms of Use
