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Proceedings Paper

The SEMATECH Berkeley MET: demonstration of 15-nm half-pitch in chemically amplified EUV resist and sensitivity of EUV resists at 6.x-nm
Author(s): Chris Anderson; Dominic Ashworth; Lorie Mae Baclea-An; Suchit Bhattari; Rikos Chao; Rene Claus; Paul Denham; Ken Goldberg; Andrew Grenville; Gideon Jones; Ryan Miyakawa; Ken Murayama; Hiroki Nakagawa; Senajith Rekawa; Jason Stowers; Patrick Naulleau
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Paper Abstract

EUV exposures at the SEMATECH Berkeley Microfield Exposure Tool have demonstrated patterning down to 15 nm half pitch in a chemically amplified resist at a dose of 30 mJ/cm2. In addition, the sensitivity of two organic chemically amplified EUV resists has been measured at 6.7 nm and 13.5 nm and the sensitivity at 6.7 nm is shown to be a factor of 6 lower than the sensitivity at 13.5 nm. The reduction of the sensitivity of each resist at 6.7 nm relative to the sensitivity at 13.5 is shown to be correlated to a reduction of the mass attenuation coefficients of the elements involved with photoabsorption.

Paper Details

Date Published: 22 March 2012
PDF: 7 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 832212 (22 March 2012); doi: 10.1117/12.917386
Show Author Affiliations
Chris Anderson, Lawrence Berkeley National Lab. (United States)
Dominic Ashworth, SEMATECH North (United States)
Lorie Mae Baclea-An, Lawrence Berkeley National Lab. (United States)
Suchit Bhattari, Lawrence Berkeley National Lab. (United States)
Rikos Chao, Lawrence Berkeley National Lab. (United States)
Rene Claus, Lawrence Berkeley National Lab. (United States)
Paul Denham, Lawrence Berkeley National Lab. (United States)
Ken Goldberg, Lawrence Berkeley National Lab. (United States)
Andrew Grenville, Inpria (United States)
Gideon Jones, Lawrence Berkeley National Lab. (United States)
Ryan Miyakawa, Lawrence Berkeley National Lab. (United States)
Ken Murayama, JSR Micro, Inc. (United States)
Hiroki Nakagawa, JSR Micro, Inc. (United States)
Senajith Rekawa, Lawrence Berkeley National Lab. (United States)
Jason Stowers, Inpria (United States)
Patrick Naulleau, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood II, Editor(s)

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