With the growing demand of the electronics industry for smaller, higher resolution features, next generation lithographic techniques, such as Extreme Ultraviolet(EUV) lithography have caused widely attention of the scientists. As the EUV absorption is determined by the nature of atoms but not by the structure of molecules, poly(4- hydroxylstyrene) (PHS) based resists can be employed in EUV lithography. Single-component resist system is constructed by the polymers consisting of two major functional components, photoacid-generating unit and the acidlabile group, which can help to alleviate the problem derived from the poor compatibility in multi-component resist system. In this paper, PHS was used as raw material to prepare a novel polymer with sulfonuium salt group attached on part of the benzene rings and the hydroxyl groups partly protected by t-BOC, which can be used as a novel kind of single-component CA resist. The polymer can be dissolved in common resist solvents. The thermal stability, photolysis and photolithographic property of the resist material were investigated.

Date Published: 20 March 2012
PDF: 8 pages
Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 83251H (20 March 2012);

Published in SPIE Proceedings Vol. 8325:
Advances in Resist Materials and Processing Technology XXIX
Mark H. Somervell; Thomas I. Wallow, Editor(s)