
Proceedings Paper
Deprotection reaction kinetics in chemically amplified photoresists determined by sub-millisecond post exposure bakeFormat | Member Price | Non-Member Price |
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Paper Abstract
Chemically amplified photoresists require a post exposure bake (PEB) to induce deprotection using a UV generated
acid-catalyst. While reaction pathways for deprotection have been proposed, key challenges remain in modeling the
reaction kinetics. In this work, we used a scanning line-focused laser beam as an alternate PEB method, to quantify the
deprotection reaction kinetics of an ESCAP-type and a 193 nm model resist system at high temperatures in millisecond
time frames. Results were compared with conventional PEB at 115°C for seconds time frames. Results show that the
deprotection kinetics follow simple first-order reaction models only under laser PEB conditions, with more complex
kinetics observed under hot plate PEB. FT-IR and NMR spectroscopies were used to characterize the reaction
byproducts. Results suggest potential differences in deprotection mechanisms between the two PEB temperature and
time regimes. The deprotection behavior obtained using this l-PEB technique enables a deeper understanding of the
reaction kinetics of photoresists, critical for current DUV and future EUV technologies.
Paper Details
Date Published: 19 March 2012
PDF: 7 pages
Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 83250N (19 March 2012); doi: 10.1117/12.916605
Published in SPIE Proceedings Vol. 8325:
Advances in Resist Materials and Processing Technology XXIX
Mark H. Somervell; Thomas I. Wallow, Editor(s)
PDF: 7 pages
Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 83250N (19 March 2012); doi: 10.1117/12.916605
Show Author Affiliations
Michael O. Thompson, Cornell Univ. (United States)
Published in SPIE Proceedings Vol. 8325:
Advances in Resist Materials and Processing Technology XXIX
Mark H. Somervell; Thomas I. Wallow, Editor(s)
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