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Proceedings Paper

Measuring thermally induced void growth in conformally filled through-silicon vias (TSVs) by laboratory x-ray microscopy
Author(s): L. W. Kong; J. R. Lloyd; M. Liehr; A. C. Rudack; S. Arkalgud; A. C. Diebold
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Paper Abstract

Laboratory-based X-ray microscopy combined with computational tomography imaging is demonstrated to have advantages over other methods of inspecting through-silicon vias (TSVs). We show that the 8 keV X-rays used by Nano X-ray Computed Tomography (NanoXCTTM) are capable of imaging voids inside filled vias before and after annealing without cross-sectioning the TSV. A series of - TSV arrays filled conformally and from the bottom up were inspected by the X-ray microscope before and after annealing. Pre-existing voids in the seamline were observed in conformally filled TSVs before annealing, while bottom up-filled TSVs do not have a seamline or voids. The same TSV samples were repeatedly annealed at 225oC, and 300oC. After annealing, the X-ray micrograph of the same TSV array showed void growth in only the conformally filled TSV. In addition, X-ray measurements show the total volume of void growth increased with annealing temperature.

Paper Details

Date Published: 3 April 2012
PDF: 6 pages
Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 832412 (3 April 2012); doi: 10.1117/12.916599
Show Author Affiliations
L. W. Kong, SUNY/Albany (United States)
SEMATECH (United States)
J. R. Lloyd, SUNY/Albany (United States)
M. Liehr, SUNY/Albany (United States)
A. C. Rudack, SEMATECH (United States)
S. Arkalgud, SEMATECH (United States)
A. C. Diebold, SUNY/Albany (United States)

Published in SPIE Proceedings Vol. 8324:
Metrology, Inspection, and Process Control for Microlithography XXVI
Alexander Starikov, Editor(s)

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