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Proceedings Paper

Effects of out-of-band radiation on EUV resist performance
Author(s): Koji Inukai; Shalini Sharma; Hiroki Nakagawa; Makoto Shimizu; Tooru Kimura
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Paper Abstract

Extreme ultraviolet (EUV) lithography high volume manufacturing tools are expected to use laser produced plasma sources to generate EUV radiation necessary for resist exposure. EUV light from laser sources emit light over a wide spectral range or popularly known as out-of-band (OOB) radiation along with the desired wavelength. EUV resists are sensitive to both EUV and OOB radiation because a fair amount of the EUV photoresists are based on materials designed for 193 nm and 248 nm. Some of the detrimental effects of OOB radiation within the lithography process can be seen in the form of photoresist film thickness loss, which in turn results in profile degradation. Therefore development of EUV resists which are insensitive to OOB radiation is very important. We investigated EUV resist patterning performance and the effect of OOB radiation specifically in the DUV (193 nm and 248 nm) wavelength range. Resist materials with various DUV absorbance were prepared, and less OOB sensitive materials were found. Moreover, in this study effective top-coat type material for OOB reduction was developed and its effectiveness was confirmed by EUV exposure results.

Paper Details

Date Published: 22 March 2012
PDF: 7 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83220X (22 March 2012); doi: 10.1117/12.916596
Show Author Affiliations
Koji Inukai, JSR Corp. (Japan)
Shalini Sharma, JSR Micro, Inc. (United States)
Hiroki Nakagawa, JSR Micro, Inc. (United States)
Makoto Shimizu, JSR Corp. (Japan)
Tooru Kimura, JSR Corp. (Japan)

Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood II, Editor(s)

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