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Proceedings Paper

EUV resist development for 16nm half pitch
Author(s): Ken Maruyama; Hiroki Nakagawa; Shalini Sharma; Yoshi Hishiro; Makoto Shimizu; Tooru Kimura
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Paper Abstract

In order to resolve 16 nm half pitch and beyond upon EUV exposure, we have developed new materials for not only resists but also for under layer materials. As for resist, short acid diffusion length photo-acid generator (PAG) was developed for high resolution. As for under layer, new material with high contact angle (CA) improved line collapse margin towards printing of minimum feature size. It was found that CA of under layer was one of the important factors for resolution improvement. Furthermore, effect of development time was investigated to improve resolution. Short development time gained resolution improvement compared with long one. Finally, combination of these results was investigated. As a result, JSR EUV resist showed the potential of 15nm half pitch resolution.

Paper Details

Date Published: 8 March 2012
PDF: 6 pages
Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 83250A (8 March 2012); doi: 10.1117/12.916555
Show Author Affiliations
Ken Maruyama, JSR Micro, Inc. (United States)
Hiroki Nakagawa, JSR Micro, Inc. (United States)
Shalini Sharma, JSR Micro, Inc. (United States)
Yoshi Hishiro, JSR Micro, Inc. (United States)
Makoto Shimizu, JSR Corp. (Japan)
Tooru Kimura, JSR Corp. (Japan)

Published in SPIE Proceedings Vol. 8325:
Advances in Resist Materials and Processing Technology XXIX
Mark H. Somervell; Thomas I. Wallow, Editor(s)

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