Share Email Print

Proceedings Paper

Understanding the ion beam in EUV mask blank production
Author(s): Patrick Kearney; Vibhu Jindal; Alfred Weaver; Pat Teora; John Sporre; David Ruzic; Frank Goodwin
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

One of the major technical hurdles to be overcome before EUV lithography can enter high volume manufacturing is the amount of defects in EUV mask blanks, many of which occur during the EUV reflector deposition process. The technology currently used to deposit this reflector is ion beam sputter deposition. Understanding the properties of the ion beam and the nature of the plasma in the deposition chamber is therefore critical to understanding defect production mechanisms and subsequently eliminating them. In this work, we have studied how the source parameters influence ion beam divergence, its footprint on the target, and the amount of beam that misses the target and hits the shielding. By optimizing the source parameters, we can modulate certain target- and shield-specific defect types. We have compared our data with models of source performance and found general agreement, enabling the theory to be fine-tuned based on the results of the measurements. Models are being developed to better describe actual source performance. We have also investigated the plasma conditions the ion beam creates in the tool, which is crucial to understanding the transport of defects from their source to the mask. A well characterized ion beam and plasma will lead to process and tool changes that will ultimately reduce defect levels in EUV mask blanks.

Paper Details

Date Published: 23 March 2012
PDF: 7 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83221U (23 March 2012); doi: 10.1117/12.916510
Show Author Affiliations
Patrick Kearney, SEMATECH North (United States)
Vibhu Jindal, SEMATECH North (United States)
Alfred Weaver, Veeco Instruments Inc. (United States)
Pat Teora, Veeco Instruments Inc. (United States)
John Sporre, Univ. of Illinois at Urbana-Champaign (United States)
David Ruzic, Univ. of Illinois at Urbana-Champaign (United States)
Frank Goodwin, SEMATECH North (United States)

Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood II, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?