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Proceedings Paper

Lithography process control using in-line metrology
Author(s): Nicolas Spaziani; René-Louis Inglebert; Jean Massin
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Paper Abstract

High volume semiconductor manufacturing yields require that critical resist feature profile is continually controlled for uniformity and centering. One reason is the small working distance of high numerical aperture lenses. Indeed, reducing process windows require more precise dimensional control. The variation of the critical dimensions can generally be attributed to the lack of the focus and/or dose control. A methodology to control the two lithographic parameters and to construct a focus and dose budget for all components (tool, layer, resist, and reticle) has been developed. This paper presents a run-to-run control called FDO1 (Focus Dose Optimization) using in-line CD metrology. We have confirmed that this method controls the photoresist shape and the photoresist width accurately and reduces the CD variation for 28 nm devices by 50%.

Paper Details

Date Published: 5 April 2012
PDF: 9 pages
Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 83241L (5 April 2012); doi: 10.1117/12.916372
Show Author Affiliations
Nicolas Spaziani, LTM, CNRS (France)
STMicroelectronics (France)
René-Louis Inglebert, LTM, CNRS (France)
Jean Massin, STMicroelectronics (France)

Published in SPIE Proceedings Vol. 8324:
Metrology, Inspection, and Process Control for Microlithography XXVI
Alexander Starikov, Editor(s)

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