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Proceedings Paper

Measurement of through silicon via etch profile by dark-field optical microscope
Author(s): Deh-Ming Shyu; Yi-sha Ku
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Paper Abstract

Currently there are no in-line TSV (through silicon via) etch profile metrology tools suitable for use in high volume manufacturing. Cross-section SEM analysis can be utilized for process development, but it is a destructive technique. In our research, a dark-field optical microscope tool is developed to in-line non-destructively measure the via profile. It is capable of measuring images with high contrast between the measuring object and the surrounding background field. As the name implies, the background is dark and the measuring object is relatively bright. Thus, a tiny structure of object can be more clearly resolved compares to the conventional bright-field optical microscope method. Analysis algorithms are developed to analyze the bottom profile and the sidewall profile of the vias separately. In this paper, vias with CDs (critical dimensions) from 30 um to 200 um are measured, and the experimental results are verified by the cross-section SEM results.

Paper Details

Date Published: 5 April 2012
PDF: 9 pages
Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 832414 (5 April 2012); doi: 10.1117/12.916370
Show Author Affiliations
Deh-Ming Shyu, Industrial Technology Research Institute (Taiwan)
Yi-sha Ku, Industrial Technology Research Institute (Taiwan)

Published in SPIE Proceedings Vol. 8324:
Metrology, Inspection, and Process Control for Microlithography XXVI
Alexander Starikov, Editor(s)

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