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Proceedings Paper

The near field characteristics of the focused field embedded in the super-RENS layer applied to lithography
Author(s): A. C. Assafrao; S. F. Pereira; H. P. Urbach
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Paper Abstract

We present a rigorous numerical model to study the near-field characteristics of the focused spot embedded in a Super Resolution Near Field stack layer. The results indicate that a focused spot beyond the diffraction limit can be achieved and its characteristics can be modeled by proper choice of optical parameters.

Paper Details

Date Published: 13 March 2012
PDF: 7 pages
Proc. SPIE 8326, Optical Microlithography XXV, 832621 (13 March 2012); doi: 10.1117/12.916368
Show Author Affiliations
A. C. Assafrao, Delft Univ. of Technology (Netherlands)
S. F. Pereira, Delft Univ. of Technology (Netherlands)
H. P. Urbach, Delft Univ. of Technology (Netherlands)

Published in SPIE Proceedings Vol. 8326:
Optical Microlithography XXV
Will Conley, Editor(s)

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