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Proceedings Paper

Development of Si-HM for NTD process
Author(s): Wen Liang Huang; Yu Chin Huang; Bo Jou Lu; Yi Jing Wang; Yeh Sheng Lin; Chun Chi Yu; Satoshi Takeda; Yasunobu Someya; Makoto Nakajima; Yuta Kanno; Hiroyuki Wakayama; Rikimaru Sakamoto
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Paper Abstract

Negative Tone Development (NTD) process with ArF immersion has been developed for the next generation lithography technology because it shows good resolution performance and process window for C/H and trench patterning. Because of the etch requirement, tri-layer process has been used popularly. However, most of the Si-HM materials are optimized for positive tone development process and most of them show poor lithography performance in NTD process. In this paper, we study the behaviors of Si-HM for NTD process, develop new concepts and optimize the formulation of Si-HM to match the resist for NTD process bellow N28 node device.

Paper Details

Date Published: 19 March 2012
PDF: 6 pages
Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 832523 (19 March 2012); doi: 10.1117/12.916363
Show Author Affiliations
Wen Liang Huang, United Microelectronics Corp. (Taiwan)
Yu Chin Huang, United Microelectronics Corp. (Taiwan)
Bo Jou Lu, United Microelectronics Corp. (Taiwan)
Yi Jing Wang, United Microelectronics Corp. (Taiwan)
Yeh Sheng Lin, United Microelectronics Corp. (Taiwan)
Chun Chi Yu, United Microelectronics Corp. (Taiwan)
Satoshi Takeda, Nissan Chemical Industries, Ltd. (Japan)
Yasunobu Someya, Nissan Chemical Industries, Ltd. (Japan)
Makoto Nakajima, Nissan Chemical Industries, Ltd. (Japan)
Yuta Kanno, Nissan Chemical Industries, Ltd. (Japan)
Hiroyuki Wakayama, Nissan Chemical Industries, Ltd. (Japan)
Rikimaru Sakamoto, Nissan Chemical Industries, Ltd. (Japan)

Published in SPIE Proceedings Vol. 8325:
Advances in Resist Materials and Processing Technology XXIX
Mark H. Somervell; Thomas I. Wallow, Editor(s)

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