The reduction of line width roughness (LWR) remains a difficult issue for very fine patterns obtained with extreme ultraviolet (EUV) lithography. Thus, the investigation of LWR-reduction from the viewpoint of resist processing has become necessary. Alternative bake processes, such as the flash-lamp (FL) has been proven feasible as for application in EUV resists. This work focuses on initial investigations for its use in post-development bake (post bake or PB). A polyhydroxystyrene-acryl hybrid EUV model resist was utilized and comparisons with 'no bake' and conventional hot-plate PB conditions were made. As a result, relatively improved LWR was obtained with FL PB with minimal effect on lithographic performance. Moreover, in the course of these experiments, two types of resist reflow mechanisms assumed to be the primary basis for the LWR improvement achieved, are discussed.

Date Published: 20 March 2012
PDF: 8 pages
Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 832513 (20 March 2012); doi: 10.1117/12.916342

Published in SPIE Proceedings Vol. 8325:
Advances in Resist Materials and Processing Technology XXIX
Mark H. Somervell; Thomas I. Wallow, Editor(s)