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Proceedings Paper

The novel top-coat material for RLS trade-off reduction in EUVL
Author(s): Ryuji Onishi; Rikimaru Sakamoto; Noriaki Fujitani; Takafumi Endo; Bang-ching Ho
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Paper Abstract

For the next generation lithography (NGL), several technologies have been proposed to achieve the 22nm-node devices and beyond. Extreme ultraviolet (EUV) lithography is one of the candidates for the next generation lithography. In EUV light source development, low power is one of the critical issue because of the low throughput, and another issue is Out of Band (OoB) light existing in EUV light. OoB is concerned to be the cause of deterioration for the lithography performance. In order to avoid this critical issue, we focused on development of the resist top coat material with OoB absorption property as Out of Band Protection Layer (OBPL). We designed this material having high absorbance around 240nm wavelength and high transmittance for EUV light. And this material aimed to improve sensitivity, resolution and LWR performance.

Paper Details

Date Published: 23 March 2012
PDF: 6 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83222D (23 March 2012); doi: 10.1117/12.916341
Show Author Affiliations
Ryuji Onishi, Nissan Chemical Industries, Ltd. (Japan)
Rikimaru Sakamoto, Nissan Chemical Industries, Ltd. (Japan)
Noriaki Fujitani, Nissan Chemical Industries, Ltd. (Japan)
Takafumi Endo, Nissan Chemical Industries, Ltd. (Japan)
Bang-ching Ho, Nissan Chemical Industries, Ltd. (Japan)


Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood II, Editor(s)

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