The 650nm oxide-confined RCLEDs (resonant-cavity light-emitting diodes) have been fabricated with different oxide aperture diameters. The oxide apertures, which could apply confinement of both the carrier distribution and the optical field, are created by lateral selective wet oxidation of AlAs layer in the p-DBR (distributed Bragg reflectors). All samples have the same diameter 80μm of the emission window defined by the circular electrodes, while their current apertures are defined by the oxidation apertures ranged from 90μm to 130μm, larger than the emission window. The maximum optical power is 1.909mW. The electrical and optical properties are systematically discussed for different oxide apertures. The greater voltage at 20mA is attained for smaller oxide-aperture devices as smaller oxide-aperture devices have greater series resistance due to the oxide layer. The maximum output power is reached rapidly for smaller oxide-aperture devices since smaller oxide-aperture devices have larger current density at the same current. The maximum output power of smaller oxideaperture devices is lower than that of larger oxide-aperture devices. It is because that larger current density and greater series resistance could lead to greater Joule heat, which results in more injected electrons relax their energy by the way of nonradiation.

Date Published: 22 February 2012
PDF: 6 pages
Proc. SPIE 8333, Photonics and Optoelectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration, 83330J (22 February 2012); doi: 10.1117/12.916261

Published in SPIE Proceedings Vol. 8333:
Photonics and Optoelectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration
Erich Kasper; Jinzhong Yu; Xun Li; Xinliang Zhang; Jinsong Xia; Junhao Chu; Zhijiang Dong; Bin Hu; Yan Shen, Editor(s)