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Proceedings Paper

Deep UV-LEDs with high IQE based on AlGaN alloys with strong band structure potential fluctuations
Author(s): Theodore D. Moustakas; Yitao Liao; Chen-kai Kao; Christos Thomidis; Anirban Bhattacharyya; Dipesh Bhattarai; Adam Moldawer
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Paper Abstract

In this paper we review our progress in developing AlGaN-based deep UV LEDs with internal quantum efficiency (IQE) in excess of 50%. This is accomplished by growing the active region of the LEDs by plasma-assisted MBE under a growth mode which promotes the introduction of deep band structure potential fluctuations in the wells beyond the statistical ones due alloy disorder. AlGaN-based deep UV-LEDs emitting in the wavelength range from 320 nm to 265 were grown by this method and fabricated into devices. By combining high IQE AlGaN QWs in the active region with polarization field enhanced carrier injection layers, unpackaged deep UV-LEDs emitting at 295 nm and 273 nm were obtained with optical output power of 0.35 mW and 1.8 mW at 20 mA continuous wave and 100 mA pulsed drive current, respectively. The maximum external quantum efficiency of these devices was calculated to be 0.4%, a result consistent with the low extraction efficiency of only 1-2%.

Paper Details

Date Published: 6 February 2012
PDF: 11 pages
Proc. SPIE 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI, 82780L (6 February 2012); doi: 10.1117/12.916213
Show Author Affiliations
Theodore D. Moustakas, Boston Univ. (United States)
Yitao Liao, Boston Univ. (United States)
Chen-kai Kao, Boston Univ. (United States)
Christos Thomidis, Boston Univ. (United States)
Anirban Bhattacharyya, Boston Univ. (United States)
Dipesh Bhattarai, Boston Univ. (United States)
Adam Moldawer, Boston Univ. (United States)

Published in SPIE Proceedings Vol. 8278:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Norbert Linder, Editor(s)

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