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Design, synthesis, and characterization of KrF negative developable bottom anti-reflective coating materials
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Paper Abstract

Negative photoresist materials for 248 nm (KrF excimer laser) implant applications are of interest to research and development recently, due to the ever-present demand to shrink lithographically-patterned device dimensions at an affordable cost. Challenges to developing such a successful resist are the topography of the substrate and subsequent reflectivity complexities. Substrate reflectivity control, resist profile, and critical dimension (CD) uniformity are critical issues that must be addressed to enable robust lithography performance at high KrF numerical aperture. The design, synthesis and characterization of a series of polymers for negative developable bottom anti-reflective coating (NDBARC) materials suitable for KrF negative implant resists is described.

Paper Details

Date Published: 19 March 2012
PDF: 7 pages
Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 83251B (19 March 2012); doi: 10.1117/12.916158
Show Author Affiliations
Sen Liu, IBM Corp. (United States)
Kuang-Jung Chen, IBM Corp. (United States)
Wu-Song Huang, IBM Corp. (United States)
Steven Holmes, IBM Corp. (United States)
Karen Huang, JSR Micro, Inc. (United States)
Nicolette Fender, JSR Micro, Inc. (United States)
Ranee Kwong, IBM Corp. (United States)
Brian Osborn, JSR Micro, Inc. (United States)
Cherry Tang, JSR Micro, Inc. (United States)
Chung-Hsi Wu, IBM Corp. (United States)
Mark Slezak, JSR Micro, Inc. (United States)

Published in SPIE Proceedings Vol. 8325:
Advances in Resist Materials and Processing Technology XXIX
Mark H. Somervell; Thomas I. Wallow, Editor(s)

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