
Proceedings Paper
Full field lithographical verification using scanner and mask intrafield fingerprintFormat | Member Price | Non-Member Price |
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Paper Abstract
Full chip verification has become a key component of the optical proximity correction (OPC) methodology over the last
decade. Full field verification to catch cross-field effects based on scanner information is becoming increasingly
important in lithography verification. Lithographic Manufacturing Check (LMC) performed with the Brion Tachyon
engine, which is the industry reference tool, now provides the capability to predict wafer CD variations across the entire
field through process windows. LMC is catching and reporting weak lithographic points having small process windows
or excessive sensitivities to mask errors based on the simulation from models with ASML scanner specific parameters.
ASML scanner intra-field information such as dose, focus, flare, illuminator map, aberration data or mask bias map can
be integrated into the LMC run to create an across-field verification and can improve the accuracy of the prediction at
different field locations. In this study we compare such across-field LMC verification with a reference LMC without any
scanner specific data.
Scanner information was loaded into the LMC model by using the Scanner Fingerprint File (SFF) functionality. Various
across field LMC runs using scanner information have been performed and analysed to identify critical design hotspots
or scanner drifts and compared with wafer measurement.
Full field Tachyon LMC results on 40nm Poly and 28nm Metal1 layer are presented. The goal is to investigate the
impact of mask, lens aberrations, illuminator, dose and focus map. This investigation includes wafer validation of the
methodology on identified critical hot spots.
Paper Details
Date Published: 13 March 2012
PDF: 9 pages
Proc. SPIE 8326, Optical Microlithography XXV, 832617 (13 March 2012); doi: 10.1117/12.916151
Published in SPIE Proceedings Vol. 8326:
Optical Microlithography XXV
Will Conley, Editor(s)
PDF: 9 pages
Proc. SPIE 8326, Optical Microlithography XXV, 832617 (13 March 2012); doi: 10.1117/12.916151
Show Author Affiliations
J. Planchot, STMicroelectronics (France)
L. Depre, Brion Technologies, Inc. (United States)
E. Yesilada, STMicroelectronics (France)
F. Robert, STMicroelectronics (France)
L. Depre, Brion Technologies, Inc. (United States)
E. Yesilada, STMicroelectronics (France)
F. Robert, STMicroelectronics (France)
F. Sundermann, STMicroelectronics (France)
H. Y. Liu, Brion Technologies, Inc. (United States)
L. Cai, Brion Technologies, Inc. (United States)
F. Chen, Brion Technologies, Inc. (United States)
H. Y. Liu, Brion Technologies, Inc. (United States)
L. Cai, Brion Technologies, Inc. (United States)
F. Chen, Brion Technologies, Inc. (United States)
Published in SPIE Proceedings Vol. 8326:
Optical Microlithography XXV
Will Conley, Editor(s)
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