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Proceedings Paper

Analysis of multibeam's scalable column for complementary e-beam lithography (CEBL)
Author(s): Enden D. Liu; Cong Tran; Ted Prescop; David K. Lam
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Paper Abstract

We present an analysis of the performance of an all electro-static electron-beam column designed for CEBL (Complementary Electron Beam Lithography). To meet the requirements of CEBL at advanced technology nodes (16 nm half-pitch and beyond), a beam size of < 20 nm FWHM (Full Width Half Maximum) and overlay accuracy of < 4 nm are needed. Beam current and beam energy must be optimized to achieve these specifications while meeting throughput requirements. In this paper, we present an in-depth analysis of the resolution of Multibeam's electron beam column as a function of beam energy. We focus on an analysis of beam energy below 30 keV, to avoid wafer heating and improve overlay accuracy. The beam size is analyzed with respect to aperture size and current. Spherical aberrations, chromatic aberrations and other effects at various beam energy levels are analyzed. At 7.5 or 5 keV beam energy, the 2 dominating factors in the beam spot size are the image size of the virtual source of the TFE (thermal field emitter) electron gun, chromatic and spherical aberrations. Performance of the column and process window to meet patterning requirements will be discussed.

Paper Details

Date Published: 21 March 2012
PDF: 8 pages
Proc. SPIE 8323, Alternative Lithographic Technologies IV, 83231X (21 March 2012); doi: 10.1117/12.916117
Show Author Affiliations
Enden D. Liu, Multibeam Corp. (United States)
Cong Tran, Multibeam Corp. (United States)
Ted Prescop, Multibeam Corp. (United States)
David K. Lam, Multibeam Corp. (United States)

Published in SPIE Proceedings Vol. 8323:
Alternative Lithographic Technologies IV
William M. Tong, Editor(s)

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